Blue electroluminescence from MOS capacitors with Si-implanted SiO 2

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1933-1941

  Matsuda, Toshihiro ^a   Nishihara, Kiyoshi ^a   Kawabe, Masaharu ^a   Iwata, Hideyuki ^a   Iwatsubo, Satoshi ^b   Ohzone, Takashi ^c  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

^b TOYAMA INDUSTRIAL TECHNOLOGY CENTER   (Japan)

^c OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE COUPLED DEVICES; CRYSTAL DEFECTS; DEFECTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; HYSTERESIS; ION IMPLANTATION; MOS CAPACITORS; NANOSTRUCTURED MATERIALS; PHOTOEMISSION; RANDOM ACCESS STORAGE; SILICA; THYRISTORS; TRANSPARENCY; ULTRAVIOLET RADIATION;

BLUE ELECTROLUMINESCENCE; LIGHT EMITTING MICRODISPLAY; TRANSPARENT ELECTRODES; WAVELENGTH;

ELECTROLUMINESCENCE;

EID: 3142784545     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.058     Document Type: Conference Paper

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