Study of the current-voltage characteristics in MOS capacitors with Si-implanted gate oxide

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 555-563

  Kameda, Etsumasa ^a   Matsuda, Toshihiro ^b   Emura, Yoshiko ^b   Ohzone, Takashi ^b  

^a TOYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

FOWLER-NORDHEIM TUNNEL CURRENTS; SILICON-IMPLANTED GATE OXIDES;

MOS CAPACITORS;

EID: 0033100577     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00299-8     Document Type: Article

References (34)

1. Kalnitsky A, Boothroyd AR, Ellul JP. IEDM Tech Dig 1988:516.
2. Kalnitsky A, Boothroyd AR, Ellul JP. Solid-St Electr 1990;33:893.
3. Ohzone T, Hori T. IEICE Trans Electr 1994;E77-C:952.
4. Matsuda T, Emura Y, Ohzone T. Solid-St Electr 1998;42:2105.
5. Kalnitsky A, Boothroyd AR, Ellul JP, Poindexter EH, Caplan PJ. Solid-St Electr 1990;33:523.
6. Hori T, Ohzone T, Odake Y, Hirase J. IEDM Tech Dig 1992:469.
7. Hao M, Hwang H, Lee JC. Appl Phys Lett 1993;62:1530.
8. Ohzone T, Hori T. Solid-St Electr 1994;37:1771.
9. Ohzone T, Matsuda T, Hori T. IEEE Trans Electr Dev 1996;43:1374.
10. Hanafi HI, Tiwari S, Khan I. IEEE Trans Electr Dev 1996;43:1553.
11. Matsuda T, Nishio M, Ohzone T, Hori T. Solid-St Electr 1997;41:887.
12. Matsuda T, Honda Y, Ohzone T. Solid-St Electr 1998;41:129.
13. Scott RS, Dumin DJ. J Electrochem Soc 1995;142:586.
14. Scott, RS, Dumin, DJ, Proc. IEEE Int Conf Microelectron Test Structures 1995:233.
15. Scott RS, Dumin DJ. IEEE Trans Electr Dev 1996;43:130.
16. Scott RS, Dumin NA, Hughes TW, Dumin DJ, Moore BT. IEEE Trans Electr Dev 1996;43:1133.
17. Moazzami R, Hu C. IEDM Tech Dig 1992:139.
18. Matsuda T, Ohzone T, Hori T. Solid-St Electr 1996;39:1427.
19. 2 System. Amsterdam: Elsevier. p. 275.
20. Sze SM. Physics of Semiconductor Devices. 2nd ed. New York: John Wiley and Sons, 1981. p. 397.
21. Pepe AJ, Chen W, Oyler M. J Electrochem Soc 1993;140:1090.
22. Svensson C, Lundström I. J Appl Phys 1973;44:4657.
23. Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbé EF, Chan K. Appl Phys Lett 1996;68:1377.
24. Lundström I, Svensson C. J Appl Phys 1972;43:5045.
25. Yasuda N, Patel N, Toriumi A. Ext Abst of Int Conf Solid State Devices 1993:847.
26. Kimura M, Koyama H. Proc of Int Rel Phys Symp 1994:167.
27. DiMarja DJ, Cartier E. J Appl Phys 1995;78:3883.
28. Kimura M, Ohmi T. J Appl Phys 1996;80:6360.
29. Dumin DJ. J Electrochem Soc 1996;143:3736.
30. Takagi S, Yasuda N, Toriumi A. IEDM Tech Dig 1996:323.
31. Rosenbaum E, Register LF. IEEE Trans Electr Dev 1997;44:317.
32. Sakakibara K, Ajika N, Hatanaka M, Miyoshi H, Yasuoka A. IEEE Trans Electr Dev 1997;44:2267.
33. Kamohara S, Park D, Hu C. Proc of Int Rel Phys Symp 1998:57.
34. De Blauwe J, Van Houdt J, Wellekens D, Degraeve R, Roussel Ph, Haspeslagh L, Deferm L, Groeseneken G, Maes HE. IEDM Tech Dig 1996:343.