Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions

Journal of Applied Physics

Volumn 81, Issue 1, 1997, Pages 126-134

  Garrido, B ^a   Samitier, J ^a   Bota, S ^a   Moreno, J A ^a   Montserrat, J ^b   Morante, J R ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001425196     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363998     Document Type: Article

References (24)

1. A. Monfret and J. Bernard, in Ion Implantation in Semiconductors, edited by I. Ruge and J. Graul (Springer, Berlin, 1971).
2. A. Hiraiwa, H. Usui, and K. Yagi, Appl. Phys. Lett. 54, 1106 (1989).
3. M. C. Busch, A. Slaoui, P. Siffert, E. Dooryhee, and M. Toulemonde, J. Appl. Phys. 71, 2596 (1992).
4. R. A. B. Devine, Nucl. Instrum. Methods Phys. Res. B 46, 244 (1990).
5. C. Domínguez, B. Garrido, J. Montserrat, J. R. Morante, and J. Samitier, Nucl. Instrum. Methods Phys. Res. B 80/81, 1367 (1993).
6. P. Mazzoldi, A. Camera, F. Caccavale, M. L. Favaro, A. Boscolo-Boscoletto, G. Granozzi, R. Bertoncello, and G. Battaglin, J. Appl. Phys. 70, 3528 (1991)
7. B. Garrido, J. Samitier, J. Montserrat, C. Domínguez, and J. R. Morante, Phys. Rev. B 49, 14 845 (1994).
8. E. Dooryhee, Y. Langevin, J. Borg, J. P. Duraud, and E. Balanzat, Nucl. Instrum. Methods Phys. Res. B 32, 264 (1988).
9. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits (Wiley-Interscience, New York, 1989).
10. 2 and its interfaces, edited by S. T. Pantelides (Pergamon, New York, 1978).
11. S. Bota, B. Garrido, J. R. Morante, A. Baraban, and P. P. Koronov, Solid-State Electron. (to be published).
12. A. P. Baraban, P. P. Koronov, S. A. Bota, and J. R. Morante, Mater. Res. Soc. Symp. Proc. 298, 253 (1993).
13. C. T. Kirk, Phys. Rev. B 38, 1255 (1988).
14. P. Lange, J. Appl. Phys. 66, 201 (1989).
15. 2 System, edited by P. Balk (Elsevier, Amsterdam, 1988).
16. R. L. Mozzi, B. E. Warren, J. Appl. Crystallogr. 2, 164 (1969).
17. G. Lucovsky, M. J. Manitini, J. K. Srivastava, and E. A. Irene, J. Vac. Sci. Technol. B 5, 530 (1987).
18. T. Furukawa, K. E. Fox, and W. B. White, J. Chem. Phys. 75, 3226 (1981).
19. B. Garrido, J. A. Moreno, J. Samitier, and J. R. Morante (unpublished).
20. M. Nakamura, Y. Mochizuki, and K. Usami, Solid State Commun. 50, 1079 (1984).
21. R. M. Almeida and C. G. Pantano, J. Appl. Phys. 68, 4225 (1990).
22. M. L. Naiman, C. T. Kirk, B. L. Emerson, J. B. Taitel, and S. Senturia, J. Appl. Phys. 58, 779 (1985).
23. F. Seitz and J. S. Koehler, in Displacements of Atoms During Irradiation, edited by F. Seitz and D. Turbunbull (Academic, New York, 1956), Vol. 2.
24. E. A. Irene, E. Tierney, and J. Angilello, J. Electrochem. Soc. 129, 2594 (1982).