Characterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si

Journal of Applied Physics

Volumn 88, Issue 7, 2000, Pages 3954-3961

  Guha, S ^a,d   Qadri, S B ^a   Musket, R G ^b   Wall, M A ^b   Shimizu Iwayama, Tsutomu ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^c AICHI UNIVERSITY OF EDUCATION   (Japan)

^d Nanoscience Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000876016     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1308096     Document Type: Article

References (14)

1. D. J. Lockwood, Z. H. Lu, and J.-M. Baribeau, Phys. Rev. Lett. 76, 539 (1996).
2. L. N. Dinh, L. L. Chase, M. Balooch, W. J. Siekhaus, and F. Woolen, Phys. Rev. B 54, 5029 (1996).
3. S. Guha, M. D. Pace, D. N. Dunn, and I. L. Singer, Appl. Phys. Lett. 70, 1207 (1997); and references therein.
4. T. van Buuren, L. N. Dinh, L. L. Chase, W. J. Siekhaus, and L. J. Terminello, Phys. Rev. Lett. 80, 3803 (1998).
5. T. Shimizu-Jwayama. N. Kurumado, D. E. Hole, and P. D. Townsend, J. Appl. Phys. 83, 6018 (1998).
6. Y. Kanemitsu and S. Okamato, Phys. Rev. B 58, 9652 (1998).
7. S. Guha, P. Steiner, and W. Lang, J. Appl. Phys. 79, 8664 (1996).
8. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
9. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delrue, Phys. Rev. Lett. 82, 197 (1999).
10. R. G. Musket, R. S. Daley, and R. G. Patterson, Nucl. Instrum. Methods Phys. Res. B 83, 425 (1993).
11. Computer Graphics Service, Lansing, New York (1989), a commercially available version of L. R. Doolittle, Nucl. Instr. Meth. 9, 344 (1985).
12. S. Guha, J. Appl. Phys. 84, 5210 (1998).
13. H. Yorikawa and S. Muramatsu, Appl. Phys. Lett. 71, 644 (1997).
14. J. P. Proot, C. Delrue, and G. Allan, Appl. Phys. Lett. 61, 1948 (1992).