Electroluminescence of MOS capacitors with Si-implanted SiO2

Solid-State Electronics

Volumn 41, Issue 6, 1997, Pages 887-893

  Matsuda, T ^a   Nishio, M ^a   Ohzone, T ^a   Hori, H ^b  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GATES (TRANSISTOR); ION IMPLANTATION; MOS DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SILICA;

CONDUCTION BAND; RADIATIVE ELECTRON CAPTURE;

CAPACITORS;

EID: 0031170501     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00025-7     Document Type: Article

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