Origin of infrared photoluminescence of nanocrystalline Si in SiO2 films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3474-3477

  Takahashi, Hiroshi ^a   Nishimura, Toshio ^a   Hashimoto, Yusuke ^a   Takahashi, Shinichi ^a   Kuwano, Hiroshi ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Cathodoluminescence; Defect states; Nanocrystalline Si; Photoluminescence; Quantum confined electron hole pairs

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; CHARGE CARRIERS; CRYSTAL DEFECTS; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (COMPUTER); ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOCRYSTALLINE SILICON;

SEMICONDUCTING SILICON;

EID: 0034205695     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3474     Document Type: Article

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