Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 104-107

  Shimizu Iwayama, Tsutomu ^a   Terao, Yoichi ^a   Kamiya, Atsushi ^a   Takeda, Motonori ^a   Nakao, Setsuo ^b   Saitoh, Kazuo ^b  

^a AICHI UNIVERSITY OF EDUCATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Ion implantation; Luminescence; Nanostructures; Silicon

Indexed keywords

AMORPHOUS SILICON; ANNEALING; EMISSION SPECTROSCOPY; ENERGY GAP; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PHOTONS; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

VISIBLE PHOTOLUMINESCENCE;

SILICON;

EID: 0030122736     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08113-5     Document Type: Article

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