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Volumn 144, Issue 6, 1997, Pages 2196-2199

Visible light emission from silicon implanted and annealed SiO2 layers

(9) Ghislotti, G a,d Nielsen, B a Asoka Kumar, P a Lynn, K G a Di Mauro, L F a Bottani, C E b Corni, F c Tonini, R c Ottaviani, G P c

a BROOKHAVEN NATIONAL LABORATORY (United States)

b POLITECNICO DI MILANO (Italy)

c UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

d Università di Modena ^* (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE OPERATIONS; HYDROGEN; ION IMPLANTATION; PHOTOLUMINESCENCE; SILICON; SPECTROSCOPIC ANALYSIS;

POSITRON ANNIHILATION SPECTROSCOPY (PAS);

SILICA;

EID: 0031166675 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1837764 Document Type: Article

Times cited : (12)

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