Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing

Applied Physics Letters

Volumn 70, Issue 10, 1997, Pages 1207-1209

  Guha, S ^a,b   Pace, M D ^a,c   Dunn, D N ^a,d   Singer, I L ^a,c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Condensed Matter Physics Div ^*  (United States)

^c Chemistry Div ^*  (United States)

^d ASEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CHEMICAL BONDS; ELECTRON SPIN RESONANCE SPECTROSCOPY; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; OXIDATION; PARTICLE SIZE ANALYSIS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

DANGLING BONDS; PARAMAGNETIC DEFECTS; SELECTED AREA ELECTRON DIFFRACTION;

SEMICONDUCTING SILICON;

EID: 0031102861     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118275     Document Type: Article

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