Direct-current and alternating-current electroluminescence of MOS capacitors with Si-implanted SiO2

Solid-State Electronics

Volumn 42, Issue 1, 1998, Pages 129-138

  Matsuda, Toshihiro ^a   Honda, Yasuhiro ^a   Ohzone, Takashi ^a  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; FREQUENCY RESPONSE; ION IMPLANTATION; SEMICONDUCTING SILICON; SILICA;

ALTERNATING-CURRENT ELECTROLUMINESCENCE; DIRECT-CURRENT ELECTROLUMINESCENCE;

MOS CAPACITORS;

EID: 0031628837     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00257-8     Document Type: Article

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