Long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide

IEEE Electron Device Letters

Volumn 20, Issue 8, 1999, Pages 409-411

  King, Ya Chin ^a   King, Tsu Jae ^a   Chenming, Hu ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; OXIDES; RESPONSE TIME (COMPUTER SYSTEMS); SEMICONDUCTING SILICON;

LONG-REFRESH DYNAMIC/QUASI-NONVOLATILE MEMORY DEVICES; SILICON RICH OXIDES (SRO); THIN OXIDE MEMORIES; THIN TUNNELING OXIDES;

NONVOLATILE STORAGE;

EID: 0032652745     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.778160     Document Type: Article

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