Straddle-gate transistor: Changing MOSFET channel length between off- and on-state towards achieving tunneling-defined limit of field-effect

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 737-740

  Tiwari, Sandip ^a   Welser, J J ^a   Solomon, Paul M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTRAINT THEORY; ELECTRON TUNNELING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

SOURCE-TO-DRAIN TUNNELING; STRADDLE-GATE TRANSISTORS;

MOSFET DEVICES;

EID: 0032267116     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)