Carbon nanotube p-n junction diodes

Applied Physics Letters

Volumn 85, Issue 1, 2004, Pages 145-147

  Lee, J U ^a   Gipp, P P ^a   Heller, C M ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR BEHAVIOR; AMORPHOUS CARBON; ROOM TEMPERATURE; SINGLE WALLED CARBON NANOTUBES (SWNT);

AMORPHOUS MATERIALS; BAND STRUCTURE; ELECTRIC FIELD EFFECTS; FERMI LEVEL; FREE ELECTRON LASERS; OPTOELECTRONIC DEVICES; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES;

CARBON NANOTUBES;

EID: 3242718826     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769595     Document Type: Article

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