An extended model for carbon nanotube field-effect transistors

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 135-136

  Knoch, J ^a   Mantl, S ^a   Lin, Y M ^b   Chen, Z ^b   Avouris, Ph ^b   Appenzeller, J ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNFET); METAL INDUCED BAND GAPS (MIBG); QUADRATRIC DISPERSION;

CARBON NANOTUBES; COMPUTER SIMULATION; ENERGY GAP; FERMI LEVEL; GATES (TRANSISTOR); GREEN'S FUNCTION; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

MOSFET DEVICES;

EID: 18044383520     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367821     Document Type: Conference Paper

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