Novel structures enabling bulk switching in carbon nanotube FETs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 133-134

  Lin, Y M ^a   Appenzeller, J ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SWITCHING; DRAIN INDUCED-BARRIER-LOWERING (DIBL); ETCHING MASKS; SILICON BACK GATE VOLTAGE;

CARBON NANOTUBES; COMPUTER SIMULATION; ELECTROSTATICS; ETCHING; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SWITCHING CIRCUITS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 18044374622     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367820     Document Type: Conference Paper

References (8)

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6. S. Heinze et al., Appl. Phys. Lett. 83, 5038 (2003).
7. A. Javey et al., Nature Mater. 1, 241 (2002).
8. S. J. Wind et al., Phys. Rev. Lett. 91, 058301 (2003).