A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications

Semiconductor Science and Technology

Volumn 19, Issue 5, 2004, Pages 634-643

  Rengel, R ^a   Pardo, D ^a   Martin M J ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; MATHEMATICAL TRANSFORMATIONS; MICROWAVES; MONTE CARLO METHODS; OPTIMIZATION; SIGNAL PROCESSING; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

DYNAMIC PARAMETERS; FD SOI MOSFET DEVICES; GATE-TO-SOURCE CAPACITANCE; PARASITIC EFFECT;

MOSFET DEVICES;

EID: 2542427631     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/5/013     Document Type: Article

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