Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

Solid-State Electronics

Volumn 45, Issue 4, 2001, Pages 541-549

  Flandre, D ^a   Adriaensen, S ^a   Akheyar, A ^a   Crahay, A ^a   Demeus L ^a   Delatte, P ^a   Dessard, V ^a   Iniguez, B ^a   Neve A ^a   Katschmarskyj, B ^a   Loumaye, P ^a   Laconte, J ^a   Martinez, I ^a   Picun, G ^a   Rauly, E ^a   Renaux, C ^a   Spote D ^a   Zitout, M ^a   Dehan, M ^a   Parvais, B ^a   Simon, P ^a   Vanhoenacker, D ^a   Raskin, J P ^a   more..

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Double gate; High temperature; Micropower; Microsystems; RF; Silicon on insulator

Indexed keywords

CMOS INTEGRATED CIRCUITS; MICROWAVES; THIN FILMS;

HIGH-TEMPERATURE MICROSYSTEMS; MICROPOWER;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035335740     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00084-3     Document Type: Article

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