Power Si-MOSFET operating with high efficiency under low supply voltage

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2385-2391

  Ohguro, Tatsuya ^a   Saito, Masanobu ^a   Morifuji, Eiji ^a   Murakami, Koji ^a   Matsuzaki, Kazuhiro ^a   Yoshitomi, Takashi ^a   Morimoto, Toyota ^a   Momose, Hisayo Sasaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Cosi2 high power added efficiency; Power Si device; Telecommunication IC

Indexed keywords

EID: 0006572417     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887026     Document Type: Article

References (12)

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