Enhanced substrate current in SOI MOSFETs

IEEE Electron Device Letters

Volumn 23, Issue 5, 2002, Pages 282-284

  Su, Pin ^b   Goto, Ken Ichi ^a,c   Sugii, Toshihiro ^c   Hu, Chenming ^a,b  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Hot carrier; Impact ionization; Self heating; Silicon on insulator (SOI); Substrate current

Indexed keywords

DIGITAL CIRCUITS; ELECTRIC CURRENTS; ELECTRIC FIELDS; GATES (TRANSISTOR); IMPACT IONIZATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THRESHOLD VOLTAGE;

DRAIN CURRENT; HOT CARRIER; SELF-LATTICE HEATING; SUBSTRATE CURRENT;

MOSFET DEVICES;

EID: 0036575859     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.998877     Document Type: Letter

References (16)

1. Hot-electron-induced MOSFET degradation-Model, monitor and improvement
2. BSIMPD: A partial-depletion SOI MOSFET model for deep-submicron CMOS designs
3. A partially-depleted SOI compact model-Formulation and parameter extraction
4. MAX DTMOS integrated with high-performance SOI logic technology
5. Measurement and modeling of self-heating in SOI NMOSFETs
6. Measurement of I-V curves of silicon-on-insulator (SOI) MOSFETs without self-heating
7. Methodology of self-heating free parameter extraction and circuit simulation for SOI CMOS
8. Self-heating characterization for SOI MOSFET based on AC output conductance
9. An AC conductance technique for measuring self-heating in SOI MOSFETs
10. Impact ionization at very low voltages in silicon
11. Temperature dependence of gate and substrate currents in the CHE crossover regime
12. Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors
13. Temperature dependence of hot carrier effects in short-channel Si-MOSFETs
14. Temperature and channel length dependence of impact ionization in P-channel MOSFETs