Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential

IEEE Transactions on Nanotechnology

Volumn 2, Issue 2, 2003, Pages 110-114

  Ramey, Stephen M ^a   Ferry, David K ^a  

^a Arizona State University   (United States)

Author keywords

Monte Carlo methods; MOSFETs; Quantum theory; Semiconductor insulator interfaces; Silicon on insulator (SOI) technology

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); MONTE CARLO METHODS; MOSFET DEVICES; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS;

CHANNEL DOPING; CHANNEL MOBILITY; SEMICONDUCTOR INSULATOR INTERFACES;

NANOTECHNOLOGY;

EID: 2542503203     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.812585     Document Type: Article

References (8)

1. S. M. Ramey and D. K. Ferry, "Modeling of quantum effects in ultrasmall FD-SOI MOSFET's with effective potentials and 3D Monte Carlo," Phys. Rev. B, Condens. Matter, vol. 314, pp. 350-353, Mar. 2002.
2. D. K. Ferry, S. Ramey, L. Shifren, and R. Akis, "The effective potential in device modeling: The good, the bad and the ugly," J. Comput. Electron., vol. 1, no. 1, pp. 59-65, July 2002.
3. S. E. Laux and M. V. Fischetti, "Numerical aspects and implementation of the DAMOCLES Monte Carlo device simulation program," in Monte Carlo Device Simulation: Full Band and Beyond, K. Hess, Ed. Norwell, MA: Kluwer, 1991.
4. D. K. Ferry, Semiconductor Transport. New York: Taylor & Francis, 2000.
5. G. F. Formicone, M. Saraniti, D. Z. Vasileska, and D. K. Ferry, "Study of a 50-nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer," IEEE Trans. Electron Devices, vol. 49, pp. 125-132, Jan. 2002.
6. 2 interface," Phys. Rev. B, Condens. Matter, vol. 32, pp. 8171-8186, Dec. 1985.
7. D. Esseni, M. Matrapasqua, G. K. Celler, C. Fiegna, L. Selmi, and E. Sangiorgi, "Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application," IEEE Trans. Electron Devices, vol. 48, pp. 2842-2850, Dec. 2001.
8. K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices. Norwood, MA: Artech House, 1993.