Small-signal substrate resistance effect in RF CMOS identified through device simulations

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 397-399

  Hjelmgren, H ^a,b  

^a ERICSSON RESEARCH   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; ELECTRIC RESISTANCE; MICROWAVE DEVICES; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; TRANSCONDUCTANCE; TRANSISTORS;

MULTIFINGER TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 0035249037     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902747     Document Type: Article

References (3)

1. H. S. Momose et al., High-frequency ac characteristics of 1.5 nm gate oxide mosfets in Tech. Dig. IEDM. 1996, pp. 105-108.
2. J. Saijets and M. AbergRF CMOS modeling IEEE Circuits Devices, pp. 7-11, Mar. 1999.
3. M. Bagheri and Y. TsividisA small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operation IEEE Trans. Electron Devices, vol. ED-32, pp. 2383-2391, 1985.