Numerical and experimental study of a 0.25 μm fully-depleted silicon-on-insulator MOSFET: Static and dynamic radio-frequency behaviour

Semiconductor Science and Technology

Volumn 17, Issue 11, 2002, Pages 1149-1156

  Rengel, R ^a   Mateos, J ^a   Pardo, D ^a   Gonzalez T ^a   Martin M J ^a   Dambrine, G ^b   Danneville, F ^b   Raskin, J P ^c  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b INSTITUT D ELECTRONIQUE   (France)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EQUIVALENT CIRCUITS; HOT CARRIERS; MONTE CARLO METHODS; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; TOPOLOGY;

DYNAMIC RADIO FREQUENCY; FULLY-DEPLETED SILICON-ON-INSULATOR MOSFET; STATIC RADIO FREQUENCY; VELOCITY OVERSHOOT REGION;

MOSFET DEVICES;

EID: 0036852015     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/11/303     Document Type: Article

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