The origin of the kink phenomenon of transistor scattering parameter $22

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 2, 2001, Pages 333-340

  Lu, Shey Shi ^a   Meng, Chinchun ^a   Chen, To Wei ^a   Chen, Hsiao Chin ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

parameters; BJT; FET; HBT; Kink phenomenon; MOSFET

Indexed keywords

COLLECTOR TO EMITTER CAPACITANCE; DRAIN TO SOURCE CAPACITANCE; DUAL FEEDBACK CIRCUIT; EQUIVALENT CIRCUIT PARAMETERS; GALLIUM ARSENIDE TRANSISTOR; KINK PHENOMENON; PARALLEL CIRCUIT; SERIES CIRCUIT; TRANSISTOR SCATTERING PARAMETER;

CAPACITANCE MEASUREMENT; ELECTRIC FREQUENCY MEASUREMENT; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRIC NETWORK ANALYSIS; EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

SCATTERING PARAMETERS;

EID: 0035249033     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.903094     Document Type: Article

References (6)

1. B. Bayrajtariglu, N. Camilleri, and S. A. Lambert, "Microwave performance of n-p-n and p-n-p AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1869-1873, Dec. 1988.
2. P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits. New York: Wiley, 1993, pp. 579-584.
3. R. A. Minasian, "Simplified GaAs M.E.S.F.E.T. model to 10 GHz," Electron. Lett., vol. 13, no. 18, p. 549, 1977.
4. Y. J. Chan, C. H. Huang, C. C.Weng, and B. K. Liew, "Characteristics of deep submicromenter MOSFET and its empirical nonlinear RF model," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 611-615, May 1998.
5. Y. Aoki and Y. Hirano, "High-Power GaAs FETs," High Power GaAs FET Amplifiers, p. 81, 1993.
6. M. Fukuta and Y. Hirachi, Fundamentals of GaAs Field Effect Transistors (in Japanese). Tokyo, Japan: Electron. Information Commun. Soc., 1992, p. 81.