Hot-carrier effects and reliable lifetime prediction in deep rubicon N- and P-channel SOI MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 11, 1998, Pages 2335-2342

  Renn, Shing Hwa ^a   Pelloie, Jean Luc ^b   Balestra, Francis ^a  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

Hot carrier effects; Lifetime prediction; SOI MOSFET; Two stage degradation

Indexed keywords

BIPOLAR TRANSISTORS; HOT CARRIERS; SILICON ON INSULATOR TECHNOLOGY;

PARASITIC BIPOLAR TRANSISTOR (PBT) ACTION;

MOSFET DEVICES;

EID: 0032205716     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726651     Document Type: Article

References (17)

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