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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 958-965

Reduced defect densities in cubic GaN epilayers with AlGaN/GaN superlattice underlayers grown on (001) GaAs substrates by Metalorganic vapor phase epitaxy

(10) Sugiyama, Mutsumi a Nosaka, Taiki a Suzuki, Tomonori a Koida, Takashi b Nakajima, Kiyomi c Aoyama, Toyomi d Sumiya, Masatomo e Chikyow, Toyohiro b,c,d Uedono, Akira a Chichibu, Shigefusa F a,b,f

a UNIVERSITY OF TSUKUBA (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

d TOKYO INSTITUTE OF TECHNOLOGY (Japan)

e SHIZUOKA UNIVERSITY (Japan)

f INST OF PHYS AND CHEMICAL RESEARCH (Japan)

Author keywords

Cubic GaN; GaAs substrate; Metalorganic vapor phase epitaxy (MOVPE); Positron annihilation technique; Superlattice (SL)

Indexed keywords

APPROXIMATION THEORY; DECOMPOSITION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SHIELDING; SUPERLATTICES;

CUBIC GAN; EPILAYERS; GAAS SUBSTRATE; POSITRON ANNIHILATION TECHNIQUE;

GALLIUM NITRIDE;

EID: 2442426564 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.958 Document Type: Article

Times cited : (6)

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