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Applied Physics A: Materials Science and Processing

Volumn 66, Issue 6, 1998, Pages 599-614

Review of defect investigations by means of positron annihilation in II-VI compound semiconductors

(4) Krause Rehberg, R a Leipner, H S a Abgarjan, T a Polity, A a

a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; ELECTRON BEAMS; IRRADIATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SPECTROSCOPY;

CADMIUM MERCURY TELLURIDE; CADMIUM TELLURIDE; ELECTRON IRRADIATION; POSITRON ANNIHILATION SPECTROSCOPY;

CRYSTAL DEFECTS;

EID: 0032099873 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050721 Document Type: Review

Times cited : (82)

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