Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 305-309

  Taniyasu, Yoshitaka ^a   Ito, Ryouichi ^a   Shimoyama, Norio ^b   Kurihara, Megumi ^b   Jia, Anwei ^a   Kato, Yoshinori ^a   Kobayashi, Masakazu ^a   Yoshikawa, Akihiko ^a   Takahashi, Kiyoshi ^c  

^a CHIBA UNIVERSITY   (Japan)

^b TRI Chemical Laboratory Inc   (Japan)

^c TEIKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Cubic GaN; In situ monitoring; Monomethylhydrazine; MOVPE; Spectroscopic ellipsometry

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

GALLIUM NITRIDE; MONOMETHYLHYDRAZINE;

SEMICONDUCTING FILMS;

EID: 0032094123     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00271-1     Document Type: Article

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