Metalorganic vapor-phase epitaxy of cubic GaN on GaAs (1 0 0) substrates by inserting an intermediate protection layer

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 276-279

  Wu, Jun ^a   Zhao, Fanghai ^a   Onabe, Kentaro ^a   Shiraki, Yasuhiro ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PYROLYSIS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; INTERMEDIATE PROTECTION LAYERS;

SEMICONDUCTING FILMS;

EID: 0034506017     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00699-0     Document Type: Article

References (11)

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