Growth of InGaN alloy on cubic GaN by metalorganic vapor-phase epitaxy

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 529-534

  Nakadaira, A ^a   Tanaka, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL STRUCTURE; ELECTRON EMISSION; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; LOW-PRESSURE METALLORGANIC VAPOR PHASE EPITAXY (MOVPE); NEAR BAND EDGE EMISSION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033221582     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<529::AID-PSSA529>3.0.CO;2-6     Document Type: Article

References (7)

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