Cubic InGaN/GaN double-heterostructure light emitting diodes grown on GaAs (001) substrates by MOVPE

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 241-246

  Taniyasu, Y ^a   Suzuki, K ^a   Lim, D H ^a   Jia, A W ^a   Shimotomai, M ^a   Kato, Y ^a   Kobayashi, M ^a   Yoshikawa, A ^a   Takahashi, K ^b  

^a CHIBA UNIVERSITY   (Japan)

^b TEIKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTALLOGRAPHY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELLIPSOMETRY; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN MEASUREMENT; SUBSTRATES;

GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; LATTICE RELAXATION;

LIGHT EMITTING DIODES;

EID: 0034226093     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<241::AID-PSSA241>3.0.CO;2-A     Document Type: Article

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