Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

Applied Physics Letters

Volumn 82, Issue 4, 2003, Pages 532-534

  Koida, T ^a,b   Chichibu, S F ^a,b,e   Uedono, A ^a,b   Tsukazaki, A ^c   Kawasakib, M ^c,g   Sota, T ^d   Segawa, Y ^e   Koinuma, H ^f,g  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d WASEDA UNIVERSITY   (Japan)

^e RIKEN   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^g Combinatorial Mat Explor/Technol ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PHOTOLUMINESCENCE; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; THERMAL EFFECTS;

DEFECT DENSITY;

ZINC OXIDE;

EID: 0037467972     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1540220     Document Type: Article

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