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Volumn 38, Issue 2, 2005, Pages 77-114

Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; PHONONS; PHOTOLUMINESCENCE; PROBES; RAMAN SPECTROSCOPY;

EID: 22644437344     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.04.004     Document Type: Review
Times cited : (17)

References (109)
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    • See for example, P. Gibart, B. Beaumont, and P. Vennéguès Epitaxial lateral overgrowth of GaN P. Ruterana M. Albrecht J. Neugebauer Nitride Semiconductors Handbook on Materials and Devices 2003 Wiley-VCH GmbH & Co.KgaA Weinheim 3-527-40387-6 (Chapter 2)
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    • Fang, X.L.1    Wang, Y.Q.2    Meidia, H.3    Mahajan, S.4
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    • 77956670571 scopus 로고    scopus 로고
    • Ultrafast Physical Processes in Semiconductors
    • K.T. Tsen Academic New York
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    • Tsen, K.T.1
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    • 2nd edition Springer Berlin
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    • Cohen, M.L.1    Chelikowsky, J.2
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    • The index of refraction for our sample is determined by an independent experiment
    • The index of refraction for our sample is determined by an independent experiment.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.