GaInNAs/GaAs quantum well growth by chemical beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 1, 1998, Pages 90-91

  Miyamoto, Tomoyuki ^a   Takeuchi, Kanji ^a   Kageyama, Takeo ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical beam epitaxy; GaInNAs; N radical; Quantum well

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPOSITION EFFECTS; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

EMISSION PEAK WAVELENGTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031675890     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.90     Document Type: Article

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