Gas-source MBE of GaInNAs for long-wavelength laser diodes

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 255-259

  Kondow, M ^a   Kitatani, T ^a   Larson, M C ^a   Nakahara, K ^a   Uomi, K ^a   Inoue, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

GaInNAs; High temperature performance; Optical fiber communications; Quantum well; Semiconductor laser

Indexed keywords

CRYSTALLINE MATERIALS; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL COMMUNICATION; OPTICAL FIBERS; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

GAS SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094942     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00060-8     Document Type: Article

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