Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

Solid State Communications

Volumn 111, Issue 5, 1999, Pages 281-285

  Cherns, D ^a   Barnard, J ^a   Ponce, F A ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLOGRAPHY; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON HOLOGRAPHY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033516341     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00130-1     Document Type: Article

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