Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Fu, Y ^a   Moon, Y T ^a   Yun, F ^a   Ozgur U ^a   Xie, J Q ^a   Dogan S ^a,d   Morkoc H ^a   Inoki, C K ^b   Kuan, T S ^b   Zhou, Lin ^c   Smith, David J ^c  

^a Virginia Commonwealth University   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; SAPPHIRE SUBSTRATES; THREADING DISLOCATIONS (TD);

CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLIZING; ORGANOMETALLICS; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

TITANIUM COMPOUNDS;

EID: 13644282008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1849833     Document Type: Article

References (10)

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2. M. A. Reshchikov and H. Morkoç, J. Appl. Phys. (submitted).
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4. S. Haffouz, B. Beaumont, P. Vennéguès, and P. Gibart, Phys. Status Solidi A 176, 677 (1999).
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