Studies of field-induced nonequilibrium electron transport in an InxGa1-xN (x≅0.6) epilayer grown on GaN

Applied Physics Letters

Volumn 82, Issue 9, 2003, Pages 1413-1415

  Liang, W ^a   Tsen, K T ^a   Ferry, D K ^b   Kim, K H ^c   Lin, J Y ^c   Jiang, H X ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

^c KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; PIEZOELECTRICITY; RAMAN SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ELECTRON DRIFT VELOCITY;

GALLIUM NITRIDE;

EID: 0037416564     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1556576     Document Type: Article

References (23)

1. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
2. S. N. Mohammad and H. Morkoc, Prog. Quantum Electron. 20, 361 (1996).
3. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys., Part 2 34, L797 (1995).
4. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys., Part 2 34, L1332 (1995).
5. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2 35, L74 (1996).
6. L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. De-Marco, J. C. Connolly, M. Jansen, F. Fang, and R. Nabiev, Appl. Phys. Lett. 69, 1532 (1996).
7. E. Gregger, K. H. Gulden, P. Riel, H. P. Schweizer, M. Moser, G. Schmiedel, P. Kiesel, and G. H. Dohler, Appl. Phys. Lett. 68, 2383 (1996).
8. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
9. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and W. J. Schaff, Appl. Phys. Lett. 80, 4741 (2002).
10. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
11. M. V. Klein, in Light Scattering in Solids I, edited by M. Cardona (Springer, New York, 1983), Vol. 8, p. 151.
12. D. S. Kim and P. Y. Yu, Phys. Rev. B 43, 4158 (1991).
13. E. D. Grann, K. T. Tsen, D. K. Ferry, A. Salvador, A. Botcharev, and H. Morkoc, Phys. Rev. B 53, 9838 (1996).
14. E. D. Grann, S. J. Sheih, K. T. Tsen, O. F. Sankey, S. E. Guncer, D. K. Ferry, A. Salvador, A. Botcharev, and H. Morkoc, Phys. Rev. B 51, 1631 (1995).
15. For a review of ensemble Monte Carlo simulation, see, for example, D. K. Ferry, Semiconductor Transport (Taylor & Francis, London, 2000), Chap. 4.
16. N. G. Weimann, L. F. Eastman, D. Doppulapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998).
17. D. Jena, A. C. Gossard, and U. K. Mishra, Appl. Phys. Lett. 76, 1707 (2000).
18. M. R. McCartney, F. A. Ponce, J. Cai, and D. P. Bour, Appl. Phys. Lett. 76, 3055 (2000).
19. D. Cherns, J. Barnard, and F. A. Ponce, Solid State Commun. 111, 281 (1999).
20. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L382 (1997).
21. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, and I. Akasaki, Appl. Phys. Lett. 73, 1691 (1998).
22. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
23. T.-H. Yu and K. F. Brennan, J. Appl. Phys. 89, 3827 (2001).