InP based lasers and optical amplifiers with wire-/dot-like active regions

Journal of Physics D: Applied Physics

Volumn 38, Issue 13, 2005, Pages 2088-2102

  Reithmaier, J P ^a   Somers, A ^a   Deubert, S ^a   Schwertberger, R ^a   Kaiser, W ^a   Forchel, A ^a   Calligaro, M ^b   Resneau, P ^b   Parillaud, O ^b   Bansropun, S ^b   Krakowski, M ^b   Alizon, R ^c   Hadass, D ^c   Bilenca, A ^c   Dery, H ^c   Mikhelashvili, V ^c   Eisenstein, G ^c   Gioannini, M ^d   Montrosset, I ^d   Berg, T W ^e   Van Der Poel, M ^e   Mork J ^e   Tromborg, B ^e   more..

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^d POLITECNICO DI TORINO   (Italy)

^e TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ENERGY GAP; LIGHT AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SPONTANEOUS EMISSION;

CARRIER MOVEMENT; QUANTUM SIZE EFFECTS; QUANTUM-DASH LASERS; TEMPERATURE STABILITY;

SEMICONDUCTOR LASERS;

EID: 21044457965     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/13/004     Document Type: Article

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