Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1467-1470

  Poole, P J ^a   McCaffrey, J ^a   Williams, R L ^a   Lefebvre, J ^a   Chithrani, D ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHEMICAL BEAM EPITAXY; DIFFUSION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

LOW TEMPERATURE PHOTOLUMINESCENCE; SEMICONDUCTOR SURFACE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035535290     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1376381     Document Type: Conference Paper

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