High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer

Applied Physics Letters

Volumn 74, Issue 20, 1999, Pages 2915-2917

  Schafer F ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GROUND STATE; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

ACTIVE LAYERS; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0342779775     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123964     Document Type: Article

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