Long-wavelength InP-based quantum-dash lasers

IEEE Photonics Technology Letters

Volumn 14, Issue 6, 2002, Pages 735-737

  Schwertberger, R ^b   Gold, D ^b   Reithmaier, J P ^a,b   Forchel, A ^b  

^a IEEE   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

1.5 1.8 m emission wavelength; Gas source molecular beam epitaxy; InP based quantum dot lasers; Optical telecommunication; Self organized growth; Semiconductor lasers; Temperature properties

Indexed keywords

EMISSION WAVELENGTH; QUANTUM DASH LASERS; TEMPERATURE SENSITIVITY;

CURRENT DENSITY; LASER PULSES; LIGHT EMISSION; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE;

SEMICONDUCTOR LASERS;

EID: 0036610067     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.1003076     Document Type: Article

References (13)

1. Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots
2. Low-threshold current density 1.3 μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
3. Single transverse mode operation of long wavelength (∼1.3 μm) InAs/GaAs quantum dot laser
4. Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
5. High temperature operating 1.3 μm quantum-dot lasers for telecommunication applications
6. 0.85As quantum well
7. Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity
8. High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
9. Low-threshold quantum dot lasers with 201 nm tuning range
10. Low chirp observed in directly modulated quantum dot lasers
11. Room-temperature operation of InAs quantum-dash lasers on InP (001)
12. Correlation between the gain profile and the temperature-induced wavelength-shift of quantum dot lasers