Room-Temperature operation of InP-based InAs quantum dot laser

IEEE Photonics Technology Letters

Volumn 16, Issue 7, 2004, Pages 1607-1609

  Kim, Jin Soo ^a   Lee, Jin Hong ^a   Hong, Sung Ui ^a   Han, Won Seok ^a   Kwack, Ho Sang ^a   Lee, Chul Wook ^a   Oh, Dae Kon ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION WAVELENGTH; QUANTUM DOT LASER; ROOM TEMPERATURE LASING OPERATION; THRESHOLD CURRENT DENSITY;

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; TEMPERATURE MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR LASERS;

EID: 4344599773     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.828494     Document Type: Article

References (16)

1. J. S. Kim, P. W. Yu, J. I. Lee, J. S. Kim, S. G. Kim, J.-Y. Leem, and M. Jeon, "Height-controlled InAs quantum dots by using a thin InGaAs layer," Appl. Phys. Lett., vol. 80, pp. 4714-4716, June 2002.
2. G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, "Low-thereshold oxide-confined 1.3 μm quantum dot laser," IEEE Photon. Technol. Lett., vol. 12, pp. 230-232, Mar. 2000.
3. Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of it's threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, June 1982.
4. F. Klopf, R. Krebs, A. Wolf, M. Emmerling, J. P. Reithmaier, and A. Forchel, "InAs/GaInAs quantum dot DFB lasers emitting 1.3 μm," Electron. Lett., vol. 37, pp. 634-636, May 2001.
5. V. M. Ustinov, E. R. Weber, S. Ruvimov, Z. Liliental-Weber, A. E.Zhukov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul'nikov, and P. S. Kop'ev, "Effect of matrix on InAs self-organized quantum dots on InP substrate," Appl. Phys. Lett., vol. 72, pp. 362-364, Jan. 1998.
6. B. Wang, F. Zhao, Y. Peng, Z. Jin, Y. Li, and S. Liu, "Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate," Appl. Phys. Lett., vol. 72, pp. 2433-2435, May 1998.
7. R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Photon. Technol. Lett., vol. 13, pp. 767-769, Aug. 2001.
8. R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Long-wavelength InP-based quantum-dash lasers," IEEE Photon. Technol. Lett., vol. 14, pp. 735-737, June 2002.
9. R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Epitaxial growth of 1.55 μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications," J. Cryst. Growth, vol. 251, pp. 248-252, Apr. 2003.
10. H. Saito, K. Nishi, and S. Sugou, "Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP (311)B substrates," Appl. Phys. Lett., vol. 78, pp. 267-269, Jan. 2001.
11. C. Paranthoen, C. Platz, G. Moreau, N. Bertru, O. Dehaese, A. Le Corre, P. Miska, J. Even, H. Folliot, C. Labbé, G. Patriarche, J. C. Simon, and S. Loualiche, "Growth and optical characterizations of InAs quantum dots on InP substrate: Toward a 1.55 μm quantum dot laser," J. Cryst. Growth, vol. 251, pp. 230-235, Apr. 2003.
12. C. Ní. Allen, P. J. Poole, P. Marshall, J. Fraser, S. Raymond, and S. Fafard, "InAs self-assembled quantum-dot lasers grown on (100) InP," Appl. Phys. Lett., vol. 80, pp. 3629-3631, May 2002.
13. Y. Qui, D. Uhl, R. Chacon, and R. Q. Yang, "Lasing characteristics of InAs quantum-dot lasers on (100) InP substrate," Appl. Phys. Lett., vol. 83, pp. 1704-1706, Sept. 2003.
14. J. S. Kim, J. H. Lee, S. U. Hong, W. S. Han, H.-S. Kwack, C. W. Lee, and D. K. Oh, "Long-wavelength laser based on self-assembled InAs quantum dots on InP (001)," Appl. Phys. Lett., submitted for publication.
15. J. S. Kim, J. H. Lee, S. U. Hong, W. S. Han, H.-S. Kwack, C. W. Lee, and D. K. Oh, "Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer," J. Cryst. Growth, vol. 259, pp. 252-256, Dec. 2003.
16. J. Brault, M. Gendry, G. Grenet, G. Hollinger, J. Olivares, B. Salem, T. Benyattou, and G. Bremond, "Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP (001)," J. Appl. Phys., vol. 92, pp. 506-510, July 2002.