The Role of Auger Recombination in InAs 1.3-μm Quantum-Dot Lasers Investigated Using High Hydrostatic Pressure

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1300-1307

  Marko, I P ^a,b   Andreev, A D ^a   Adams, A R ^a   Krebs, R ^c   Reithmaier, J P ^c   Forchel, A ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^c UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

Auger recombination; Hydrostatic high pressure; InAs; Quantum dot; Recombination mechanisms; Semiconductor laser; Threshold current

Indexed keywords

ARRAYS; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; HYDROSTATIC PRESSURE; INDIUM COMPOUNDS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR QUANTUM DOTS;

AUGER RECOMBINATION; HYDROSTATIC HIGH PRESSURE; INAS; RECOMBINATION MECHANISMS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 1342303548     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.819504     Document Type: Conference Paper

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