Highly resolved maskless patterning on InP by focused ion beam enhanced wet chemical etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 6142-6144

  König, Harald ^a   Reithmaier, Johann Peter ^a   Forchel, Alfred ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; ION BEAMS; ION IMPLANTATION; LITHOGRAPHY; SUBSTRATES;

FOCUSED ION BEAM ENHANCED ETCHING (FIBEE); MASKLESS PATTERNING; WET CHEMICAL ETCHING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0040113700     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6142     Document Type: Article

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