Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

IEEE Photonics Technology Letters

Volumn 13, Issue 6, 2001, Pages 541-543

  Berg, T W ^a   Bischoff, S ^a   Magnusdottir, I ^a   Moork J ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

Gain recovery; Quantum dot amplifiers; Ultrafast

Indexed keywords

AMPLIFIERS (ELECTRONIC); FREQUENCIES; GROUND STATE; LASER PULSES; MATHEMATICAL MODELS; PHONONS; SEMICONDUCTING INDIUM COMPOUNDS; ULTRAFAST PHENOMENA;

HIGH REPITITION FREQUENCY; MASTER EQUATION MODEL; MODULATION LIMITATION; QUANTUM-DOT AMPLIFIER; RATE EQUATION MODEL; ULTRAFAST GAIN RECOVERY; WETTING LAYER DYNAMICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035365156     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.924013     Document Type: Article

References (10)

1. InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature
2. In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties
3. InGaAs-GaAs quantum-dot lasers
4. Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers
5. High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers
6. Carrier dynamics in quantum dots: Modeling with master equations for the transitions between micro-states
7. 1-xAs/GaAs quantum dots
8. Auger carrier capture in self-assembled quantum dot structures
9. Quantum dimensionality, entropy, and the modulation response of quantum dot lasers
10. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition