Epitaxial growth of 1.55 μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 248-252

  Schwertberger, R ^a   Gold, D ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

A1. Low dimensional structures; A3. Gas source molecular beam epitaxy; A3. Quantum dashes; A3. Self organized growth; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

HETEROJUNCTIONS; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS;

QUANTUM DASHES;

EPITAXIAL GROWTH;

EID: 0037382422     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02371-0     Document Type: Conference Paper

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