Low threshold quantum dot injection laser emitting at 1.9μm

Electronics Letters

Volumn 34, Issue 7, 1998, Pages 670-672

  Ustinov, V M ^a   Zhukov, A E ^a   Egorov, A Yu ^a   Kovsh, A R ^a   Zaitsev, S V ^a   Gordeev, N Yu ^a   Kopchatov, V I ^a   Ledentsov, N N ^a   Tsatsul'nikov, A F ^a   Volovik, B V ^a   Kop'ev, P S ^a   Alferov, Z I ^a   Ruvimov, S S ^a,b   Liliental Weber, Z ^b   Bimberg, D ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; INJECTION LASERS; LIGHT EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

LATTICE MATCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032473661     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980373     Document Type: Article

References (9)

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