1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Electronics Letters

Volumn 35, Issue 11, 1999, Pages 898-900

  Shernyakov, Yu M ^a   Bedarev, D A ^a   Kondrat'eva, E Yu ^a   Kop'ev, P S ^a   Kovsh, A R ^a   Maleev, N A ^a   Maximov, M V ^a   Mikhrin, S S ^a   Tsatsul'nikov, A F ^a   Ustinov, V M ^a   Volovik, B V ^a   Zhukov, A E ^a   Alferov, Zh I ^a   Ledentsov, N N ^b   Bimberg, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ACTIVATED SPINODAL DECOMPOSITION;

SEMICONDUCTOR LASERS;

EID: 0032683532     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990596     Document Type: Article

References (11)

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