Optical properties and carrier dynamics of InAs/InP(1 1 3)B quantum dots emitting between 1.3 and 1.55 μm for laser applications

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 56-59

  Miska, P ^a   Even, J ^a   Paranthoen, C ^c   Dehaese, O ^a   Folliot, H ^a   Loualiche, S ^a   Senes, M ^b   Marie, X ^b  

^a INSA DE RENNES   (France)

^b INSA   (France)

^c EPFL   (Switzerland)

Author keywords

Modelling; Optical properties; Quantum dots; Semiconductor lasers

Indexed keywords

BAND STRUCTURE; LASER APPLICATIONS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CARRIER DYNAMICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037391397     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00749-X     Document Type: Conference Paper

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