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Volumn 251, Issue 1-4, 2003, Pages 230-235
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Growth and optical characterizations of InAs quantum dots on InP substrate: Towards a 1.55 μm quantum dot laser
a
INSA DE RENNES
(France)
d
EPFL
(Switzerland)
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Author keywords
A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes
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Indexed keywords
ANNEALING;
ATOMIC FORCE MICROSCOPY;
CRYSTAL GROWTH;
DEPOSITION;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
NANOSTRUCTURED MATERIALS;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR LASERS;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
OPTICAL CHARACTERIZATIONS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0037380592
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(02)02473-9 Document Type: Conference Paper |
Times cited : (64)
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References (16)
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